IRG7PSH73K10PbF transistor equivalent, insulated gate bipolar transistor.
* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction Temperature 175 °C
* 10 μS short Circuit SOA
* Square RBSOA
* 100%.
* Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
* Rugged Trans.
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